A SPICE model for a phase-change memory cell based on the analytical conductivity model  

作　　者：魏益群 林信南 贾宇超 崔小乐 何进 张兴 

机构地区：[1]The Key Laboratory of Integrated Microsystems,Shenzhen Graduate School of Peking University [2]Peking University Shenzhen SOC Key Laboratory,PKU-HKUST,Shenzhen-Hong Kong Institute [3]The Kev Laboratorv of Integrated Microsvstems.Shenzhen Graduate School of Peking University [4]Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,School of Electronics and Computer Science,Peking University

出　　处：《Journal of Semiconductors》2012年第11期52-56,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61176099,61006032,60925015)

摘　　要：By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit simulation.Compared with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the measurement.In addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change process.The above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit simulation.Compared with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the measurement.In addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change process.The above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.

关 键 词：phase-change memory compact model analytical conductivity 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TP393[自动化与计算机技术—计算机科学与技术]