Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP  

作　　者：王辰伟 刘玉岭 田建颖 牛新环 郑伟艳 岳红维 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology [2]Market Information Department of CSPC Zhongqi Pharmaceutical Technology(Shijiazhuang) Co.,Ltd

出　　处：《Journal of Semiconductors》2012年第11期134-138,共5页半导体学报（英文版）

基　　金：supported by the Major National Science and Technology Special Projects,China(No.2009ZX02308);the Tianjin Natural Science Foundation of China(No.lOJCZDJC 15500);the National Natural Science Foundation of China(No.10676008);the Fund Project of Hebei Provincial Department of Education,China(No.2011128)

摘　　要：The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors（Benzotriazole,BTA）.The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors（Benzotriazole,BTA）.The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.

关 键 词：planarization alkaline copper slurry inhibitor free copper pattern wafer 

分 类 号：TN305.2[电子电信—物理电子学]