硅光敏三极管光开通现象的研究  

Study of Optical Turn-on Phenomenon for Silicon Phototransistor

作　　者：张君和[1] 

机构地区：[1]武汉大学物理系

出　　处：《固体电子学研究与进展》1990年第1期58-64,共7页Research & Progress of SSE

摘　　要：本文研究了硅npn型光敏三极管的光开通现象.证实了光开通实质是光触发引起的晶闸管导通现象.查明了其原因是在于底面集电极处形成的非欧姆接触.具体讨论了由于金在底面形成p型层而构成的npnp四层结构的实例.In this paper, the optical turn-on phenomenon for silicon phototransis-tor is studied. It is found that this phenomenon is a forward conducting process for the thyristor triggered by light. It is caused by a non-ohmic contact on the back of silicon block. As an example, we discuss npnp four-layer structure in which the evaporated gold on the back of silicon block becomes a p- type layer

关 键 词：硅光敏三极管 光开通 光敏器件 

分 类 号：TN36[电子电信—物理电子学]