表面光电压法测定Al_xGa_(1-x)As的组分和少子扩散长度  

Determination of Composition and Minority Carrier Diffusion Length for n-AI_xGa_(1-x)As/n-GaAs by Surface Photovoltage Method

作　　者：黄景昭[1] 沈qi华 

机构地区：[1]厦门大学

出　　处：《固体电子学研究与进展》1990年第2期200-204,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助课题

摘　　要：本文通过测量n-Al_xGa_(1-x)As/n-GaAs材料的表面光电压并推导了有关的计算公式,判定其光跃迁类型,从而计算出它们的禁带宽度,确定了Al的组分x;计算出它们的少子扩散长度.测量和计算的结果与SEM方法的测量结果基本一致.Authors measured the surface photovoltaic spectra of the n-AlxGa1-xAs/n-GaAs materials, drived the calculated formulae and judged the types of optical transition. Based oa these results, the energy gaps and the composition x of Al were determined and the minority carrier diffusion lengths were calculated. The results basically agree with that measured by SEM.

关 键 词：ALGAAS 组分 少子扩散 测量 光电压 

分 类 号：TN304.26[电子电信—物理电子学]