微重力生长HgCdTe材料的微观缺陷  

Study of defects in HgCdTe grown under micro-gravity

作　　者：魏龙[1] 王文华[1] 王宝义[1] 巨新[1] 吴忠华[1] 奎热西[1] 李毅军[2] 谈晓臣 马勉军[2] 

机构地区：[1]中国科学院高能物理研究所,北京100080 [2]中国空间技术研究院兰州物理研究所,兰州730000

出　　处：《核技术》2000年第6期381-383,共3页Nuclear Techniques

基　　金：中国科学院九五重点项目!KJ952-51-416;国家自然科学基金!19805010

摘　　要：采用正电子湮没寿命谱方法对空间微重力及重力条件下生长的呼银汞（MCT）材料中的微观缺陷进行了研究。结果表明，在空间微重力条件下生长的MCT晶体中，其空位型缺陷浓度低于地球上有重句条件下生长的晶体，并且缺陷浓度沿轴向的分布比较均匀。The microstructures of vacancy-type defect in HgCdTe (MCT) samples grownunder micro-gravity condition were studied by positron lifetime measurements. Theresults showed that, the defect concentrations in the samples grown under spacendcro-gravity were lower than those grown under earth gravity on the ground. Thedistribution of defect concentration along the axial in the samples grown under spacemicro-gravity were more uniform than that grown under earth gravity on theground.

关 键 词：碲镉汞 红外探测材料 微观缺陷 微重力生长 

分 类 号：TN213.03[电子电信—物理电子学] O771[理学—晶体学]