栅控横向PNP双极晶体管辐照感生电荷的定量分离  

Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors

作　　者：席善斌[1,2,3] 陆妩[1,2] 任迪远[1,2] 周东[1,2,3] 文林[1,2] 孙静[1,2] 吴雪[1,2,3] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院研究生院,北京100049

出　　处：《物理学报》2012年第23期374-380,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10975182)资助的课题~~

摘　　要：设计并制作了一种栅控横向PNP双极晶体管测试结构,在常规横向PNP双极晶体管基区表面氧化层上制作了一栅电极,利用栅扫描法,通过扫描栅极所加电压,获得了基极电流随栅极电压的变化特性.理论推导和数学计算获得了氧化物陷阱电荷和界面陷阱电荷的定量变化,分离出栅控横向PNP双极晶体管在辐照及其室温退火过程中感生的缺陷.对设计的晶体管测试结构和采用的测试方法做了具体介绍.A new test structure of gate controlled lateral PNP bipolar transistors designed and fabricated. An independent gate terminal is patterned on the oxide layer above the active base region of normal lateral PNP bipolar transistors. According to the gate sweep technique, by sweeping the voltage applied to the gate terminal, one can obtain the characteristic of base current versus gate voltage. The quantitative variations of oxide trapped charges and interface traps are analytically estimated and numerically calculated, and the radiation induced defects in the gate controlled lateral PNP bipolar transistors during 60Co-T irradiation and annealing at room temperature are separated independently. The test structures and measurements of the bipolar transistors used in the experiment are introduced in detail in this paper.

关 键 词：栅扫描法 栅控 横向PNP双极晶体管 电荷分离 

分 类 号：TN322.8[电子电信—物理电子学]