Broadband light emitting from multilayer-stacked InAs/GaAs quantum dots  

作　　者：刘宁 金鹏 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences [2]Electricity Examination Department,Patent Examination Cooperation Center of the Patent Office,State Intellectual Property Office

出　　处：《Chinese Physics B》2012年第11期408-411,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057,61274072,and 60776037)

摘　　要：We report the effect of the GaAs spacer layer thickness on the photoluminescence （PL） spectral bandwidth of InAs/GaAs self-assembled quantum dots （QDs）. A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structurM properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.We report the effect of the GaAs spacer layer thickness on the photoluminescence （PL） spectral bandwidth of InAs/GaAs self-assembled quantum dots （QDs）. A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structurM properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.

关 键 词：quantum dots broudband spectrum superluminescent diode 

分 类 号：O431.2[机械工程—光学工程]