Electronic structures and optical properties of Zn-dopedβ-Ga_2O_3 with different doping sites  

作　　者：李超 闫金良 张丽英 赵刚 

机构地区：[1]School of Physics and Optoelectronic Engineering,Ludong University

出　　处：《Chinese Physics B》2012年第12期430-435,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.10974077);the Natural Science Foundation of Shandong Province,China(Grant No.2009ZRB01702);the Shandong Provincial Higher Educational Science and Technology Program,China(Grant No.J10LA08)

摘　　要：The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 remains stable. The Zn doping does not change the basic electronic structure of β-Ga2O3, but only generates an empty energy level above the maximum of the valence band, which is shallow enough to make the Zn-doped β-Ga2O3 a typical p-type semiconductor. Because of Zn doping, absorption and reflectivity are enhanced in the near infrared region. The higher absorption and reflectivity of ZnGa（2） than those of ZnGa（1） are due to more empty energy states of ZnGa（2） than those of ZnGa（1） near Ef in the near infrared region.The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 remains stable. The Zn doping does not change the basic electronic structure of β-Ga2O3, but only generates an empty energy level above the maximum of the valence band, which is shallow enough to make the Zn-doped β-Ga2O3 a typical p-type semiconductor. Because of Zn doping, absorption and reflectivity are enhanced in the near infrared region. The higher absorption and reflectivity of ZnGa（2） than those of ZnGa（1） are due to more empty energy states of ZnGa（2） than those of ZnGa（1） near Ef in the near infrared region.

关 键 词：FIRST-PRINCIPLES Zn-doped β-Ga2O3 p-type semiconductor optical properties 

分 类 号：TN304[电子电信—物理电子学]