高压IGBT暂态机理模型分析  

Transient high voltage IGBT physical model

作　　者：姬世奇[1] 赵争鸣[1] 袁立强[1] 鲁挺[1] 

机构地区：[1]清华大学电机工程与应用电子技术系,电力系统及发电设备控制和仿真国家重点实验室,北京100084

出　　处：《清华大学学报（自然科学版）》2012年第11期1578-1583,共6页Journal of Tsinghua University(Science and Technology)

基　　金：国家"八六三"高技术项目(2011AA050402)

摘　　要：在已有的绝缘栅双极性晶体管(insulated gate bipolar transistor,IGBT)机理模型的基础上将IGBT分为金属-氧化层-半导体-场效晶体管(metal oxide semiconductor field effect transistor,MOSFET)和双极结型晶体管(bipolar junction transistor,BJT)2部分,分别对其进行建模,同时给出了模型参数的提取方法。模型在Matlab中实现。以FZ600R65KF1型IGBT为例给出了模型参数值,并完成了该型号IGBT的单管测试实验。通过对高压IGBT开通暂态、关断暂态和开关损耗的仿真结果和实验结果进行比较,验证了机理模型对于高压IGBT的适用性。Insulated gate bipolar transistor （IGBT） physical models were studied to divide the IGBT into metal oxide semiconductor field effect transistor （MOSFET） and bipolar junction transistor （BJT） parts. A high voltage IGBT transient physical model was presented. The parameters extraction method was also given. The model in Matlab was tested in a Buck converter using FZ600R65KF1 IGBT with its parameters provided. By comparing the experiment and simulation results of voltage, current and powerloss waveforms during turn on and turn-off transient, the accuracy of the transient model of high voltage IGBT is verified.

关 键 词：关键词:绝缘栅型双极性晶体管(insulated GATE BIPOLAR transistor IGBT) 机理模型 暂态 

分 类 号：TM464[电气工程—电器]