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机构地区:[1]Department of Electronic Science and Technology,University of Science and Technology of China
出 处:《Journal of Semiconductors》2012年第12期56-61,共6页半导体学报(英文版)
摘 要:This paper presents a single chip CMOS power amplifier with neutralization capacitors for ZigbeeTM system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power ofa PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P I dB point. The core area is 0.73 × 0.55 mm2.This paper presents a single chip CMOS power amplifier with neutralization capacitors for ZigbeeTM system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power ofa PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P I dB point. The core area is 0.73 × 0.55 mm2.
关 键 词:power amplifier ZigbeeTM CMOS digital control NEUTRALIZATION
分 类 号:TN722.75[电子电信—电路与系统] TP273[自动化与计算机技术—检测技术与自动化装置]
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