近空间升华法制备CdZnTe厚膜及其性能研究  

CdZnTe thick films deposited by close-spaced sublimation and its properties

作　　者：苏虹[1] 査钢强[1] 高俊宁[1] 介万奇[1] 

机构地区：[1]西北工业大学材料学院凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2012年第23期3322-3324,3328,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50902113;50902114);教育部新世纪优秀人才支持计划基金资助项目(NCET-10-0076);国家重大科学仪器设备开发专项基金资助项目(2011YQ040082)

摘　　要：采用近空间升华法在FTO玻璃衬底上制备CdZnTe多晶厚膜,并采用扫描电镜(SEM)、能谱仪(EDS)、X射线衍射仪(XRD)、紫外-可见光谱仪、I-V测试仪等对CdZnTe厚膜的表面形貌、成分、结构以及光电性能进行分析表征。结果表明,所制备的CdZnTe膜均匀致密,随生长时间的延长,晶粒尺寸明显增大;不同厚度的CdZnTe膜均表现出沿(111)晶面的择优生长;CdZnTe厚膜的禁带宽度在1.53～1.56eV之间;电阻率在1010Ω.cm数量级,具有较好的光电响应,试制的薄膜探测器可用作计数型探测器。Polycrystalline CdZnTe thick films were deposited on glass substrates via close-spaced sublimation （CSS） technique. The morphology, composition, micro-structure, optical and electrical properties of CdZnTe thick films were investigated by SEM, EDS, XRD, UV spectrophotometer and I-V measurements. It is found that the grains are uniform, also, the grain sizes increase significantly with increasing deposition time. The XRD results show that all the thick films possess cubic structure, and tend to grow along the orientation of （111） face. The optical energy gap of all the thick films are in the region of 1.53-1.56eV. The resistivity of the films are 10^10Ω cm orders of magnitude, and have good optical response. It can be used for counting detectors.

关 键 词：近空间升华法 CdZnTe厚膜 薄膜探测器 光电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]