ZnO-Nb_2O_5掺杂SnO_2基陶瓷研究  

Research of tin dioxide ceramics doped with zinc oxide and niobium pentoxide

作　　者：汤帆[1] 黄永前[1] 孙敬韦[1] 何洋[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《功能材料》2012年第B11期202-204,共3页Journal of Functional Materials

摘　　要：通过常压烧结制备SnO2基陶瓷,研究了ZnO、Nb2O5单掺杂及ZnO-Nb2O5复合掺杂对SnO2基陶瓷的烧结性能及电阻率的影响。采用SEM及XRD对试样分别进行了微观结构观察及物相分析。研究表明,掺杂ZnO能提高陶瓷的体积密度,但对于降低电阻率的影响不明显,当ZnO掺杂量在0.5%～0.75%(质量分数)时,SnO2基体积密度可达到6.67～6.73g/cm3;掺杂Nb2O5不能有效提高烧成陶瓷的体积密度,但能显著降低SnO2基陶瓷的电阻率;0.5%(质量分数)ZnO～1.5%(质量分数)Nb2O5复合掺杂在1450℃下烧成的陶瓷可得到较好的性能,其体积密度可达到6.61g/cm3,常温电阻率为867.84Ω.cm。ZnO,Nb2O5 and ZnO-Nb2O5 doped tin dioxide based ceramics prepared by the pressureless sintering have been investigated as function of sintering character and electrical property. The microstructure and the phase constitution was measured by scanning electrical microscope and XRD. The results indicate that ZnO can improve the volume density of the materials, but cannot decrease the electrical resistivity signally, the optimal content of ZnO was 0.5wt%- 0.75wt% ;Nb20s can signally decrease the electrical resistivity, but don＇t effectively improve the volumn density of the materials. The tin dioxide based ceramics doped with 0.5wt%ZnO- 1.5wt%NbzO5 and sintered at 1450℃ has high performance; the volume density was 6.61g/cm^3 , the electrical resistivity was 867. 84Ω·cm.

关 键 词：SnO2基陶瓷 ZnO-Nb2O5复合掺杂 体积密度 电阻率 

分 类 号：TN383[电子电信—物理电子学]