片上栅氧经时击穿失效监测电路与方法  

An On-Chip Circuit for Monitoring Failure Due to TDDB

作　　者：辛维平[1] 庄奕琪[1] 李小明[1] 

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071

出　　处：《电子学报》2012年第11期2188-2193,共6页Acta Electronica Sinica

基　　金：国家自然科学基金(No.60376023)

摘　　要：栅氧经时击穿(Time Dependent Dielectric Breakdown(TDDB))等失效机理引起的失效是电路失效的主要原因之一,而这些电路的失效可能会造成灾难性的后果.本文提出了一种片上、能对栅氧经时击穿引起的失效进行实时预报的电路及方法.当栅氧经时击穿引发电路或系统失效时,本监测电路会发出报警信号.本监测电路采用标准的CMOS工艺,只占用很小的芯片面积,同时它只与宿主电路共用电源信号,从而不会给宿主电路带来任何干扰.本监测电路采用0.18μmCMOS工艺实现了投片验证.In the electronic systems,the failure of a module or circuit often results in catastrophic consequences.The failure of these modules or circuits is mostly caused by device failure mechanisms,including TDDB（time dependent dielectric breakdown）,hot carrier injection,negative bias temperature instability,etc.This paper presents an on-chip real-time prediction circuit and method for TDDB.When the circuit under test is failure due to TDDB,the prediction circuit is capable of issuing a warning signal.The prediction circuit,designed by a standard CMOS process,occupies a small silicon area and does not share any signal with the circuits under test,therefore,the possibility of interference with the surrounding circuits is safely excluded.The circuit is taped out in 0.18 micron process,and its performance is met the design requirements.

关 键 词：栅氧经时击穿 实时 可靠性 预报 寿命 

分 类 号：TN495[电子电信—微电子学与固体电子学]