1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition  

作　　者：高成 李海鸥 黄姣英 刁胜龙 

机构地区：[1]School of Reliability and System Engineering,Beihang University [2]Information&Communication College,Guilin University of Electronic Technology

出　　处：《Journal of Central South University》2012年第12期3444-3448,共5页中南大学学报（英文版）

基　　金：Project(Z132012A001)supported by the Technical Basis Research Program in Science and Industry Bureau of China;Project(61201028,60876009)supported by the National Natural Science Foundation of China

摘　　要：InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.InGaAs high electron mobility transistors(HEMTs)on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition(MOCVD).Room temperature Hall mobilities of the 2-DEG are measured to be over 8700cm2/V-s with sheet carrier densities larger than 4.6×10 12cm-2.Transistors with 1.0μm gate length exhibits transconductance up to 842mS/mm.Excellent depletion-mode operation,with a threshold voltage of-0.3V and IDSS of 673mA/mm,is realized.The non-alloyed ohmic contact special resistance is as low as 1.66×10-8Ω/cm2,which is so far the lowest ohmic contact special resistance.The unity current gain cut off frequency(fT)and the maximum oscillation frequency(fmax)are 42.7 and 61.3 GHz,respectively.These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.

关 键 词：metamorphic device mental organic chemical vapor deposition high electron mobility transistors InP substrate INGAAS 

分 类 号：TN32[电子电信—物理电子学] TN304.23