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机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]石家庄信息工程职业学院通信工程系,石家庄050035
出 处:《半导体技术》2012年第12期909-912,933,共5页Semiconductor Technology
摘 要:提出了一种基于负阻单片微波集成电路的新型压控振荡器(VCO)的设计方法,即负阻电路采用GaAs HBT工艺设计流片,调谐选频电路采用薄膜混合集成工艺制作。利用微封装技术将二者结合构成完整的VCO。这种新型VCO既具有单片微波集成电路的小型化、低成本的优势,又保持了薄膜混合集成电路可灵活调试的特性。通过设计流片数款在不同频段的负阻单片微波集成电路,可完成频率1~18 GHz、小型化、系列化VCO的研制。X波段宽带VCO的实测结果显示,当电调电压在2~13 V变化时输出频率覆盖8~12.5 GHz,调谐线性度为2∶1,电调电压5 V时相位噪声为-96 dBc/Hz@100 kHz。Based on GaAs HBT negative resistance MMIC,a method of design the novel voltage controlled oscillator(VCO) was proposed,Namely negative resistance MMIC was designed ground on HBT technology,and the frequency tuning circuit was produced with thin film hybrid integrated process.A full VCO was made of negative resistance MMIC and frequency tuning circuit by mini-package technique to combine both to constitute.The novel VCO has MMIC's feature such as miniature and low cost,it is easy to adjust,which keeps the thin film hybrid integrated circuit characteristic.Base on several kinds of negative resistance MMIC that operate at different frequency band,a series of mini-packaged VCO were designed which frequency covers from 1 GHz to 18 GHz.The test results of X band broadband VCO show that the output frequency covers from 8 GHz to 12.5 GHz,and the tuning linearity is 2∶ 1 when the tuning voltage is 2~13 V,and the phase noise is-96 dBc/Hz@100 kHz when the tuning voltage is 5 V.
关 键 词:负阻单片微波集成电路(MMIC) 压控振荡器 砷化镓异质结三极管 相位噪声 小型化
分 类 号:TN752[电子电信—电路与系统]
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