硅纳米悬臂梁传感结构压阻特性的试验研究  

Experimental research on piezoresistive characteristics of silicon nanocantilever sensing structure

作　　者：张加宏[1,2] 杨镇博[2] 刘清惓[1,2] 李敏[1,2] 冒晓莉[1,2] 

机构地区：[1]南京信息工程大学江苏省气象探测与信息处理重点实验室,江苏南京210044 [2]南京信息工程大学电子与信息工程学院,江苏南京210044

出　　处：《传感器与微系统》2012年第12期9-11,15,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(41075026;41275042);江苏省自然科学基金资助项目(BK2012460);公益性行业(气象)科研专项资助项目(GYHY200906037);东南大学MEMS教育部重点实验室开放研究基金资助项目(2010-02)

摘　　要：为了研究拉伸和大形变弯曲共存状态下硅纳米悬臂梁传感结构的压阻特性,采用CMOS工艺制作了硅纳米悬臂梁传感测试结构,结合原子力显微镜和半导体参数测试仪对其电学参数进行了测量,其位移灵敏度高达1.58216×10-4/nm。在电阻相对变化率实验测量和ANSYS有限元平均应力仿真的基础之上,进而提出了一个非线性压阻模型来提取大弯曲硅纳米悬臂梁的一阶和二阶压阻系数。研究结果表明:其一阶压阻系数约为体硅的5倍,该巨压阻效应为利用硅纳米压阻传感结构来实现超高灵敏度的纳米压力传感器提供了可能的途径。研究结果同时也揭示了要获得高的灵敏度和好的可靠性,硅纳米悬臂梁的长度设计需要折衷考虑。In order to study the piezoresistive characteristics of silicon nanocantilever sensing structure under the coexistence state of stretching and deformation bending, CMOS process is used to manufacture silicon nanocantilever sensing structure, and atomic force microscope and semiconductor parameter tester are used to measure the electrical parameters of silicon nanocantilever, and the measured displacement sensitivity is 1. 58216 ~ 10-4/nm. On the basis of experimental measurements of the relative change rate of resistance and the ANSYS finite element simulation of average stress, a nonlinear piezoresistive model is proposed to extract the first-order and second-order piezoresistive coefficients of the bent silicon nanocantilever. Research results show that the first- order piezoresistive coefficient is approximately 5 times that of the balk silicon, and the significantly enhanced piezoresistive effect provides possible ways for the use of the silicon nano piezoresistive sensing structure to achieve uhra-high sensitivity design of the pressure nanosensor. Furthermore, the results also reveal that the length design of the silicon nano-cantilever needs trade-offs in order to obtain high sensitivity and good reliability.

关 键 词：硅纳米悬臂梁 压阻特性 原子力显微镜 有限元 

分 类 号：TN304.93[电子电信—物理电子学]