IGBT器件的发展  

The Development of Insulated Gate Bipolar Transistor

作　　者：戚丽娜[1] 张景超[1] 刘利峰[1] 赵善麒[1] 

机构地区：[1]江苏宏微科技股份有限公司,江苏常州213022

出　　处：《电力电子技术》2012年第12期34-38,共5页Power Electronics

摘　　要：绝缘栅双极型晶体管(IGBT)是由双极型晶体管(BJT)和绝缘栅型场效应管(即MOSFET)合成的复合全控型电压驱动式功率半导体器件,具有MOSFET的高输入阻抗及BJT的低导通压降,以及驱动电路简单、安全工作区宽等优点。若想继续提升IGBT性能和可靠性,不断降低IGBT制造成本,让国产IGBT跟上世界领先水平,需深刻理解IGBT的发展历程,清晰认识自身的优势与不足,透彻掌握领先技术的精髓,投入更多人力、物力研发新方法、新材料,时刻关注世界领先厂家的发展方向及业界需要。在此主要阐述了IGBT的发展历程、国内外现状、目前一些先进的技术方法和新材料及今后的发展方向。Insulated gate bipolar transistor（IGBT） is created by the functional integration of MOS and bipolar junction transistor（BJT） technologies in monolithic chip.It combines the advantages of the existing families of MOS and BJT to achieve optimal device characteristics, approximately fulfilling the criteria of the ideal power switch, such as high input impedance,low on-resistance, simple drive circuit,widely safe operating area（SOA） and so on.People should know about the history of IGBT, learn more about advanced structure and materials, pay more attention to the trend of development if people want to improve the performance of IGBT, decrease the product cost and keep up with the advanced technology.This paper expounds the IGBT development course,the situation at home and abroad,some advanced technology methods and new materials and the future direction of development.

关 键 词：绝缘栅双极型晶体管 双极型晶体管 安全工作区 

分 类 号：TN32[电子电信—物理电子学]