面向IMT-Advanced应用的射频前端T/R组件的设计与实现  

Design and Implementation of RF Front-End T/R Module for IMT-Advanced Application

作　　者：杨务诚[1] 杨洪文[2] 曾云[1] 阎跃鹏[2] 孙征宇[2] 张韧[2] 刘宇辙[2] 

机构地区：[1]湖南大学物理与微电子科学学院,长沙410082 [2]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2012年第6期753-757,共5页Microelectronics

基　　金：国家科技重大专项资助项目(2009ZX03007-001)

摘　　要：阐述了面向IMT-Advanced应用的射频前端T/R组件中各模块的设计与实现方法,并对接收支路和发射支路进行了设计。宽带开关工作频率范围为0～6GHz,具有插入损耗低、隔离度高的优点;超宽带低噪声放大器在700MHz～6GHz的工作范围内增益高且平坦,噪声系数小;宽带功率放大器采用自适应线性化偏置电路,在5.8GHz频段具有优良的线性度。整个T/R组件输入电压为5V,接收支路增益为13.75dB,噪声系数为6.58dB,发射支路增益为22.77dB,输出功率为20.2dBm。T/R module in RF front-end specifically for IMT-Advanced applications was designed and implemented. Both receiving and transmitting branches were also designed. The wideband switch operating in the frequency range from DC to 6 GHz achieved low insertion loss and high isolation. UWB LNA operating from 700 MHz to 6 GHz featured high gain with optimized flatness and low noise figure. The wideband power amplifier using adaptively linear bias circuit exhibited excellent linearity at 5.8 GHz frequency band. With 5 V input voltage, the T/R module had a gain of 13.75 dB and a noise figure of 6.58 dB for receiving branch, and a gain of 22. 77 dB and an output power of 20. 2 dBm for transmitting branch.

关 键 词：T R组件 接收支路 发射支路 

分 类 号：TN402[电子电信—微电子学与固体电子学]