基于0.18μm CMOS RF工艺的有源电感设计与优化  

Design and Optimization of Active Inductor Based on 0.18 μm CMOS RF Technology

作　　者：王伟印[1] 沈琪[1] 顾晓峰[1] 赵琳娜[1] 

机构地区：[1]江南大学电子工程系轻工过程先进控制教育部重点实验室,江苏无锡214122

出　　处：《微电子学》2012年第6期792-795,共4页Microelectronics

基　　金：国家自然科学基金资助项目(11074280);中央高校基本科研业务费专项资金(JUSRP20914;JUDCF10031);江苏省普通高校研究生创新计划(CXLX11_0486)

摘　　要：提出一种带负反馈的新型折叠共源共栅有源电感,对相关电路结构和参数进行了设计,分析了影响有源电感性能的各种因素。基于TSMC 0.18μm 1P6M CMOS工艺,利用CadenceSpectreRF对电路进行了仿真和优化,得到电感值最大为138nH,品质因子Q可达到59。A novel folded-cascode active inductor circuit topology with feedback resistance was proposed. Circuit structure and related parameters were designed, and various factors affecting performance of the active inductor were analyzed. Based on TSMC＇s 0. 18μm 1P6M CMOS RF technology, the circuit was simulated and optimized using Cadence SpectreRF. The active inductor with feedback resistance exhibited a maximum inductance of 138 nH and a best quality-factor of 59.

关 键 词：有源电感 CMOS射频工艺 折叠共源共栅 品质因子 

分 类 号：TN432[电子电信—微电子学与固体电子学]