泡生法生长掺碳钛宝石激光晶体的研究  

Study on Properties of Ti:sapphire Crystals Doped Carbon Grown by the Kyropoulos Technique(KY)

作　　者：胡克艳[1,2] 徐军[2] 汪传勇[2] 李红军[2] 邹宇琦[2] 杨秋红[1] 

机构地区：[1]上海大学电子信息材料系,上海200072 [2]中国科学院上海硅酸盐研究所,上海201800

出　　处：《无机材料学报》2012年第12期1321-1324,共4页Journal of Inorganic Materials

基　　金：上海市科学技术委员会基金(10ZR1434200);国家自然科学基金(61177037)~~

摘　　要：钛宝石激光晶体在现代高功率激光领域具有重要的应用价值,但大尺寸、高品质的晶体生长仍是当前钛宝石应用面临的重大难题.本文研究了泡生法技术生长大尺寸掺碳钛宝石激光晶体,结果显示,泡生法生长得到的直径180 mm、30 kg的钛宝石没有出现应力集中的开裂等宏观缺陷现象,钛离子在晶体中分布均匀接近理论值,晶体的FOM值达到200.该研究对低红外残余吸收,高品质因素、大尺寸钛宝石激光晶体的生长应用具有重要的现实意义.Ti：sapphire crystal is of great value in the domain of modern science and technology application. But growth of large Ti：sapphire crystals with a homogeneous titanium distribution and good optical quality is still a challenge. Carbon-doped Ti：sapphire crystal was grown by the Kyropoulos technique. The present work shows that by the utilization of KY growth technology, it is possible to grow carbon-doped Ti：sapphre, with 180 mm in diameter and 30 kg in weight, without macroscopic defects such as cracking. As-grown large crystals show high chemical homogeneities and the figure of merit is above 200, The study has the important practical significance of grown large Ti：Sapphire crystal with low infrared absorption loss and high figure of merit.

关 键 词：泡生法 掺碳 钛宝石激光晶体 

分 类 号：TG174[金属学及工艺—金属表面处理]