MEMS传感器敏感单元RTD的力敏特性优化  

Optimize the Force-Sensitive Characteristics of RTD as the Sensitive Unit of MEMS Sensors

作　　者：郭浩[1,2] 唐军[1,2] 张斌珍[1,2] 刘俊[1,2] 薛慧[1,2] 丁宇凯[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《传感技术学报》2012年第10期1361-1364,共4页Chinese Journal of Sensors and Actuators

基　　金：中国博士后科学基金项目(2011M500544);重点实验室基金项目(9140C12041008;9140C120402110C1201);国家自然科学基金项目(61171056)

摘　　要：首先通过减小垒前阱的厚度消除了负阻区的"台阶区",提高负阻区的阻值为-7.916Ω,并通过加压测试RTD(共振隧穿二极管)的力电耦合灵敏度,使其灵敏度由原来的5.5 mA/g增大到7 mA/g,优化了RTD作为MEMS传感器敏感单元的灵敏度,同时也通过增大RTD结构的台面积大小,有效的消除了负阻区的"台阶区",并使其负阻区的阻值增大为-0.06Ω,提高了MEMS传感器敏感单元RTD结构的灵敏度。The ＂bench area＂ in the negative resistance area was eliminated by reducing the thickness of the well,and the resistance of the negative resistance was improved to-7.916Ω.Then,the force-electrical coupling effect of RTD（Resonant Tunnel Diodes）was tested by the pressure system.As the result,the sensitivity of RTD as the MEMS sensor sensitive unit was increased from 5.5 mA/g to 7 mA/g.As well as,the ＂bench area＂ eliminates as increasing the size of launch region of RTD structure.At the same time,its negative resistance increases to 0.06 Ω.Finally,the sensitivity of RTD structure as the unit of MEMS sensors was improved.

关 键 词：RTD 力电耦合 偏压灵敏度 台阶效应 

分 类 号：TB303[一般工业技术—材料科学与工程]