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作 者:谭心[1,2] 李瑜庆[2] 刘学杰[2] 贾亦超[2]
机构地区:[1]东北大学机械工程与自动化学院,沈阳110004 [2]内蒙古科技大学机械工程学院,包头014010
出 处:《材料导报》2012年第24期120-124,共5页Materials Reports
基 金:国家自然科学基金(50845065);内蒙古自然科学基金(2009MS0812);内蒙古自治区高等学校科学研究项目(NJ10103);内蒙古科技大学创新基金(2009NC028)
摘 要:采用基于密度泛函理论的平面波赝势方法,研究了具有置换型界面的Ti-Si-N的结构、弹性常数及热力学性质。在计算热力学性质时,先计算一组不同晶格常数下的Ti-Si-N的声子谱及相应的静态总能,由此得到不同晶格常数下的自由能;再由准谐近似及自由能极小判据得到自由能与温度的关系,进而计算热膨胀系数、定容摩尔热容及定压摩尔热容与温度的关系。计算结果说明制备Ti-Si-N及类似薄膜时,要选择合适的基底、温度等条件。The structures, elastic constants and thermodynamic properties of substitutional interface Ti-Si-N were studied with the aid of plane wave pseudopotential method based on density functional theory. When calculating thermodynamic properties, the phonon spectrum and the corresponding static total energy were calculated for a different set of lattice constants of Ti-Si-N, then the free energy was obtained with different lattice constants. The temperature dependence of free energy was achieved by quasi-harmonic approximation and minimization criterion of free energy, and further the temperature dependences of coefficient of thermal expansion, constant volume molar heat capacity and constant pressure molar heat capacity with temperatures were calculated. It is indicated that the selections of appropriate substrate, temperature and other conditions are necessary when preparing Ti-Si-N and similar thin films.
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