Shaker通道电压感受器S3-S4片段末端氨基酸分析  

Mapping the Ends of S3-S4 Segments of Voltage Sensor in Shaker Channel

作　　者：尚德志[1] 张丽艳[2] 汲坤[2] 沈薇[2] 牟均[3] 

机构地区：[1]沈阳医学院口腔医学院颌面外科,沈阳110034 [2]沈阳医学院基础医学院病理生理教研室,沈阳110034 [3]沈阳医学院国资处,沈阳110034

出　　处：《中国医科大学学报》2012年第12期1077-1079,共3页Journal of China Medical University

基　　金：国家自然科学基金资助项目(30971177);辽宁省教育厅重点实验室项目(LS2010162)

摘　　要：目的探讨分析传统Shaker通道电压感受器S3-S4在膜中所处的位置。方法采用膜拓扑结构分析和糖基化扫描方法,对传统Shaker通道的电压感受器S3-S4在膜中所处位置进行分析。结果 Shaker通道中,S3以Nexo/Ccyt方式插入到膜中,其C端终止于T329,S4以Nexo/Ccyt方式插入到膜中,其N端终止于L358。结论 Shaker通道电压感受器S3-S4为跨膜片段,与电压门控机制中传统的Shaker模型一致。Objective To analyze the membrane positions of S3-S4 segments in voltage sensor of traditional Shaker channel. Methods Membrane topological analysis and glyeosylation scanning methods were used. Results In Shaker channel, S3 inserts into membrane with an New/Ccyt orientation and the C-terminus ends at T329 residue;S4 inserts into membrane with an New/Ccytorientation and the N-terminus ends at L358 residue. Conclusion S3 and S4 of Shaker channel are transmembrane segments;our findings are consistent with the traditional Shaker model which supports voltage gating mechanism.

关 键 词：Shaker通道 电压门控机制 膜拓扑结构 电压门控钾通道 

分 类 号：Q5[生物学—生物化学]