分段恒电位电化学沉积法制备CuInSe_2吸收层  

The Electrodeposition of CuInSe_2 Adsorb Layers by Step Potentiostatic Method

作　　者：胡飞[1] 叶澍[1] 文思逸[1] 胡跃辉[1] 

机构地区：[1]景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,景德镇333001

出　　处：《材料导报（纳米与新材料专辑）》2012年第2期232-235,共4页

基　　金：中国人保部留学人员科技活动项目([2011]474);江西省青年科学家(井冈之星)培养对象计划(20112BCB23022);江西省自然科学基金(2010GQC0108);江西省教育厅科技项目(GJJ12496)

摘　　要：采用分段恒电位电沉积法在FTO导电玻璃上制备了CuInSe2(CIS)薄膜。通过线性电位扫描分析了阴极的电化学反应,并通过电化学沉积法制备了CIS薄膜。结果表明,恒电位电化学沉积的薄膜与CIS的化学计量比相差较大,增加溶液中铟离子的浓度,可以提高铟在镀层的含量,使薄膜更接近CIS化学计量比。而采用分段恒电位法沉积薄膜,可以抑制铜硒化合物的生长,使薄膜更接近于CIS化学计量比。CuInSe2 （CIS） thin films were prepared by step potentiostatic electrodeposition on F-doped tin oxide （FTO） glasses, and their electrodeposition behavior were investigated by the linear sweep voltammetry. It is shown that the one-step potentiostatic electrodeposited CIS thin films have great deviation from the ideal stoichiometric ratio of 1 ： 1 ： 2, and the increasing of In3＋ concentration in the electrolytes could close to the stoichiometric ratio. And the step electrodeposition could reduce the production of the copper selenide and the electrodeposited CIS film has shown a near-stoichiometric ratio.

关 键 词：线性电位扫描 铜铟硒薄膜 分段电沉积 恒电位电沉积 

分 类 号：TQ153.4[化学工程—电化学工业]