光电导型混晶Si_(1-x)Ge_x波导探测器  

Mix-crystal Si_(1-x) Ge_x Photoconductor Waveguide Detector

作　　者：庄婉如[1] 郑有炓[2] 朱顺明[2] 刘夏冰[2] 黄永箴[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家实验室,北京100083 [2]南京大学物理系,南京210093

出　　处：《高技术通讯》2000年第5期39-42,共4页Chinese High Technology Letters

基　　金：国家自然科学基金资助项目!( 6963 60 10 )

摘　　要：首次报导了光电导型混晶Si1-xGex 波导探测器。混晶Si1-xGex 是在硅基SiON/SiO2 /Si上用快速加热超低压化学气相淀积生长并经 6 50℃退火 30min得到的。探测器宽 10 μm ,长 2mm。探测器加上 2 0V偏置电压时 ,探测灵敏度在 0 0 2 2～ 0 0 10A/W之间。混晶Si1-xGex 造成探测器的光谱响应曲线发生蓝移。当锗组分x =0 35、 0 4、0 5、和 0 6时 ,探测器峰值波长分别对应为 875nm、 892nm、 938nm和 984nm。这种探测器有望能直接制作在硅基SiO2 波导元器件的尾端上 ,可用于光互连和光数据处理。WT5BZ] Mix crystal Si 1-x Ge x Photoconductor Waveguide Detector was reported at first. The Si 1-x Ge x layer was grown on SiON/ SiO 2/Si by rapid thermal processing, very low pressure, chemical vapor deposition(RTP/VLP CVD). Then running the anneal of 650℃ for 30 minutes, Si 1-x Ge x alloywas changed into the mixing of the polycrystal and amorphous. The photoconductor detectors were fabricated with 10μm wide and 2mm long . The detecting sensitivities were between 0.022 to 0.010 A/W, when detectors were biased 20V. The responsive curves of the spectrum of the photoconductor detector made by the mixing of the polycrystal and amorphous were a function of Ge content and were shifted blue move from the one of single crystal Si 1-x Ge x detector. The peak wavelength response at 875nm, 892 nm, 938 nm and 984nm are corresponding to the Ge content x=0.35,x=0.4, x=0.5 and x=0.6 respectively. These Si 1-x Ge x photoconductor waveguide detector can be very expedient fabricated on the end of SiO 2 waveguide devices.

关 键 词：硅基光电子器件 光探测器 光电子集成 半导体 

分 类 号：TN25[电子电信—物理电子学]