Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing  

作　　者：晏长岭 邓昀 李鹏 宋小卯 史建伟 

机构地区：[1]National Key Lab on High-Power Semiconductor Lasers,Changchun University of Science and Technology

出　　处：《Chinese Optics Letters》2012年第12期68-70,共3页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China under Grant Nos.60676025 and 61076038

摘　　要：InGaAs/GaAs vertical-cavity surface-emitting lasers （VCSELs） are fabricated by a thermal selective wet- oxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs. The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time. Compared with a unannealed laser device, the light output power increases by about 12%. An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device. The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated.InGaAs/GaAs vertical-cavity surface-emitting lasers （VCSELs） are fabricated by a thermal selective wet- oxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs. The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time. Compared with a unannealed laser device, the light output power increases by about 12%. An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device. The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated.

关 键 词：OXIDATION Surface emitting lasers Testing 

分 类 号：TN248[电子电信—物理电子学] TN248.4