Small d-spacing WSi_2/Si multilayers for X-ray monochromators  

作　　者：黄秋实 李浩川 朱京涛 王占山 唐永建 

机构地区：[1]Key Laboratory of Advanced Micro-structural Materials,Ministry of Education,Institute of Precision Optical Engineering,Physics Department,Tongji University [2]Research Center of Laser Fusion,Chinese Academy of Engineering Physics

出　　处：《Chinese Optics Letters》2012年第12期87-90,共4页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos. 10825521 and 10905042);the National "973"Program of China (No. 2011CB922203)

摘　　要：A WSi2/Si multilayer, with 300 bi-layers and a 2.18-nm d-spacing, is designed for X-ray monochroma- tor application. The nmltilayer is deposited using direct current magnetron sputtering technology. The reflectivity of the 1st-order Bragg peak measured at E = 8.05 keV is 38%, and the angular resolution （△θ/θ） is less than 1.0%. Fitting results of the reflectivity curve indicate a layer thickness drift of 1.6%, mainly accounting for the broadening of the Bragg peaks. The layer morphology is further characterized by transmission electron microscopy, and a well-ordered multilayer structure with sharp interfaces is observed from the substrate to the surface. The material combination of WSi2/Si is a promising candidate for the fabrication of a high-resolution nmltilayer monochromator in the hard X-ray region.A WSi2/Si multilayer, with 300 bi-layers and a 2.18-nm d-spacing, is designed for X-ray monochroma- tor application. The nmltilayer is deposited using direct current magnetron sputtering technology. The reflectivity of the 1st-order Bragg peak measured at E = 8.05 keV is 38%, and the angular resolution （△θ/θ） is less than 1.0%. Fitting results of the reflectivity curve indicate a layer thickness drift of 1.6%, mainly accounting for the broadening of the Bragg peaks. The layer morphology is further characterized by transmission electron microscopy, and a well-ordered multilayer structure with sharp interfaces is observed from the substrate to the surface. The material combination of WSi2/Si is a promising candidate for the fabrication of a high-resolution nmltilayer monochromator in the hard X-ray region.

关 键 词：Curve fitting Interfaces (materials) MONOCHROMATORS REFLECTION Silicon Transmission electron microscopy X ray diffraction X rays 

分 类 号：TH74[机械工程—光学工程]