半导体激光治疗中度及重度痤疮的临床疗效  

Clinical effect of diode laser on treatment of moderate to severe acne

作　　者：何惟薇[1] 徐慧青[1] 朱海泳[1] 陈洁[1] 顾立国[1] 孙文彪[1] 胡康容[1] 

机构地区：[1]上海市静安区中心医院(复旦大兰附属华山医院静安分院)皮肤科,200040

出　　处：《中华医学美学美容杂志》2012年第6期404-406,共3页Chinese Journal of Medical Aesthetics and Cosmetology

基　　金：基金项目：上海市静安区卫生系统“十、百、千”人才培养项目（编号：200706B007） 志谢 感谢复旦大学附属华山医院皮肤科卢忠教授的指导

摘　　要：目的探索波长650、810nm的半导体激光治疗中、重度痤疮的临床疗效及安全性。方法将87例面部痤疮患者，分为激光治疗组（A组）和药物治疗组（B组）。A组：用波长650、810nm半导体激光连续输出功率400～450mw，非接触性照射（距离为2～3cm），10min／次，1次／d．共2周；然后，隔日1次，共2周，16次；B组：口服罗红霉素胶囊0．15g，2次／d。共4周，配合口服维生素B6，外用绿药膏治疗。治疗前及治疗后每周进行临床疗效观察，数码拍照以备对比分析，并在治疗结束后，随访4个月。同时，记录治疗过程中出现的不良反应。结果A组和B组疗效在治疗后2周（65．0％比42．6％，P〉0．05）、4周（92．5％比76．5％，P〉0．05）差异无统计学意义，但A组复发率显著低于B组，差异有统计学意义（30．0％比61.7％，P〈0．01）。结论与药物治疗相比，半导体激光治疗中、重度痤疮可显著降低其复发率。Objective To evaluate the efficacy and safety of 650 nm, 810 nm diode laser on the treatment of moderate to severe acne. Methods A total of 87 patients with moderate to severe acne were divided into diode laser group （group A） and medication group （group B）. In group A, the patients were irradiated with 650, 810 nm diode laser at the fluence of 400 450 mW distance of 2-3 cm. In group B, the patients were treated with roxithromycin combined with vitamin B6 and gel lincomycihi. Clinical follow-up was performed every week for 4 months. All the adverse effects were recorded. Results There was no significantly statistical difference in the cure rate between the two groups （group A versus group B at 2 weeks： 65.0 % versus 42.6 %, P〉0.05; at 4 weeks： 92.5 % versus 76.5 0%, P〉0.05）. However, the recurrence rate of group A was much lower than that of group B （30.0 % versus 61.7 0%, P〈0.01）. There were no severe adverse effects in both groups during the period of the follow-up. Conclusions Compared to the medication, 650, 810 nm diode laser appears to be associated with lower recurrence rate in the treatment of moderate to severe ache.

关 键 词：痤疮 半导体激光 

分 类 号：R758.733[医药卫生—皮肤病学与性病学]