TiO_2/VO_2双层薄膜的制备及光电性能研究  

Preparation of TiO_2/VO_2 bilayer thin film and its photoelectric properties

作　　者：吕晓庆[1] 李合琴[1] 周矗[1] 崔跃[1] 何蓓[1] 刘涛[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2012年第12期1659-1661,共3页Journal of Hefei University of Technology：Natural Science

基　　金：国家973计划资助项目(2008CB717802);安徽省自然科学基金资助项目(090414182;11040606M63);安徽省高校自然科学基金资助项目(KJ2009A091);合肥工业大学国家级大学生创新性实验计划资助项目(101035914)

摘　　要：文章采用磁控溅射法在玻璃基底上分别制备VO2单层薄膜与TiO2/VO2双层薄膜,并在Ar气中进行退火。用X射线衍射仪、扫描电镜、紫外-可见光分光光度计、LCR测试仪对薄膜样品的晶体结构、表面形貌、可见光透过率、电阻-温度特性进行测试。结果表明,TiO2/VO2双层薄膜的相变温度降低到56℃,电阻温度系数为-1.087/℃,可见光透过率提高了20%～30%,且薄膜生长致密均匀。The VO2 monolayer thin film and TiO2/VO2 bilayer thin film were prepared by magnetron sputtering on glass substrates, and then annealed in Ar atmosphere. Their crystal structures, surface morphologies, visible light transmittances and resistance-temperature characteristics were measured by X-ray diffraction, scanning electron microscope, UV-visible spectrophotometer and LCR tester. The results show that compared with VO2 monolayer thin film, the phase transition temperature of TiOa/VO2 bilayer thin film decreases to 56℃ and its temperature coefficient of resistance is -1. 087/℃. TiO2/VO2 bilayer thin film becomes more denser and smoother and its visible light trans-mittance increases 20%-30%.

关 键 词：TIO2 VO2双层薄膜 相变温度 电阻温度曲线 可见光透过率 

分 类 号：TB43[一般工业技术]