HgI_2同质外延薄膜的气相生长和探测器性能  

Study on Iso-Epitaxy Vapor Growth of HgI_2 Film and Its Detectors

作　　者：许岗[1] 谷智[2] 魏淑敏[1] 

机构地区：[1]西安工业大学材料与化工学院,西安710032 [2]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《功能材料与器件学报》2012年第5期426-430,共5页Journal of Functional Materials and Devices

基　　金：西安工业大学凝固理论与功能材料科研创新团队基金;西北工业大学基础研究基金(JC20110244)

摘　　要：为提高HgI2晶体气相定向生长效果,在ITO导电玻璃上从DSMO-HgI2-H2O溶液中过饱和析出HgI2外延衬底,进而在外延衬底上气相沉积HgI2多晶薄膜并制备了相应的探测器。利用SEM、XRD分析了薄膜的定向生长特性;以241Am为放射源,在室温下测试了探测器的探测效率。In order to improve the orientated growth of HgI2 films in vapor, iso - epitaxy layers of poly- crystalline mercuric iodide were deposited on ITO conductive glass by DSMO -HgI2 -H2O solvent evapo- ration, polycrystalline HgI2 films were then grown on iso - epitaxy layers by PVD. The films grew were investigated by SEM and XRD. The polycrystalline HgI2 films detectors fabricated was studied by an un- collimated 241Am radiative source with the principal energy of 59.5keV at room temperature.

关 键 词：碘化汞 多晶薄膜 同质外延 定向生长 探测器 

分 类 号：O484.1[理学—固体物理]