同时模式的中波/长波碲镉汞双色红外探测器  

Simultaneous mode MW/LW two color HgCdTe infrared detector

作　　者：叶振华[1] 李杨[1,2] 胡伟达[1] 陈路[1] 廖亲君[1] 陈洪雷[1] 林春[1] 胡晓宁[1] 丁瑞军[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院研究生院,北京100039

出　　处：《红外与毫米波学报》2012年第6期497-500,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(6070612);中国科学院国防科技创新基金(cxjj-10-m29)~~

摘　　要：采用光刻胶喷涂技术,突破了碲镉汞双色探测器加工的非平面离子注入和金属化开口等工艺.基于分子束外延(MBE)和原位掺杂技术生长的p3-p2-P1型碲镉汞(Hg1-xCdxTe)多层异质结材料,通过MW光电二极管n型注入区的开口刻蚀、非平面的MW/LW同步B+注入、台面侧向钝化和爬坡金属化,得到了同时模式的128×128面阵MW/LW双色探测器.在液氮温度下,MW/LW双色探测器两个波段的光电二极管截止波长λc分别为5.10μm和10.10μm,对应的峰值探测率Dλp*分别为2.02×1011cmHz1/2/W和3.10×1010cmHz1/2/W.通过对同时模式双色探测器材料与芯片结构的优化设计,HgCdTe双色探测器MW向LW、LW向MW的光谱串音分别抑制到了3.8%和4.4%.The results of simultaneous-mode 128×128 MW/LW two-color HgCdTe Infrared detector was presented in this paper.The photoresist（PR） spray-coating technology was developed to open the windows of non-planar implantation and metallization of two-color HgCdTe infrared detector.By etching to expose the n-type implantation-region of MW photodiodes,non-planar B＋-implantation of MW photodiodes and LW photodiodes synchronously,side-wall passivation,side-wall metallization and flip-chip hybridization with Readout Integrated Circuit（ROIC）,128×128 MW/LW two-color HgCdTe Infrared detector was achieved from a triple-layer p3-p2-P1 hetero-junction Hg1-xCdxTe film grown by molecular beam epitaxy.At liquid nitrogen temperature,the cut-off wavelengths of the simultaneous-mode MW/LW two-color Infrared detector were 5.1μm and 10.1 μm individually,and the peak detectivities（Dλp＊） were 2.02×1011 cmHz1/2/W and 3.10×1010 cmHz1/2/W respectively.Also the spectral cross-talks of MW-to-LW and LW-to-MW were suppressed to only 3.8% and 4.4% by optimizing the chip structure of the simultaneous-mode two-color infrared detector.

关 键 词：HGCDTE 中波 长波双色 同时模式 光谱串音 

分 类 号：TN305.7[电子电信—物理电子学] TN304.25