小波相关分析在IGBT模块缺陷诊断中的应用  

Application of wavelet correlation analysis in defect diagnosis of IGBT module

作　　者：周生奇[1] 周雒维[1] 孙鹏菊[1] 李亚萍[1] 

机构地区：[1]重庆大学输配电装备及系统安全与新技术国家重点实验室,重庆400044

出　　处：《电机与控制学报》2012年第12期36-41,共6页Electric Machines and Control

基　　金：国家自然科学基金面上项目(51077137);国家自然科学基金重点项目(51137006);国际科技合作计划项目(2010DFA72250)

摘　　要：为了研究IGBT模块内部缺陷辨识问题,依据缺陷对IGBT模块门极回路元件参数影响,分析IGBT模块门极电压随缺陷的变化,提出一种基于小波相关分析的IGBT模块缺陷诊断方法,即通过采用小波分析缺陷前后门极电压信号在特定时段的序列相关性的变化,逆向判断IGBT模块内部是否存在缺陷,防止运行中突发故障,及由此造成的电力电子装置损伤,并给出实验验证。结果表明,以缺陷前后门极电压信号在特定时段序列的小波互相关系数差异为参数,能够在IGBT模块故障前诊断出其内部缺陷的发生,为及时替换赢得时间,有效地实现IGBT模块内部缺陷辨识。To study identification of defects inside IGBT module, the phenomenon that the gate voltage changes with defects is analyzed, which is based on the influence of defects on parasitic parameters in- volved in the gate loop. A prognostic method for diagnosing defects in the IGBT module based on wavelet correlation analysis was presented with principle and characteristic. This method employed wavelet corre- lation deviation of gate voltage time series during the beginning special time interval of the turn-on process to identify defects, which can give enough time to avoid IGBT modules fault and damage lectronic equipment. This method can be applied as a diagnostic approach before fault. correctness and application value of this method are verified by test results. to the power e- In the end, the

关 键 词：可靠性 缺陷 IGBT模块 小波 相关性分析 

分 类 号：TM464[电气工程—电器]