Phosphorescent white organic light-emitting devices with color stability and low efficiency decay by using wide bandgap interlayer  

作　　者：陈珉 于军胜 林慧 雷霞 文雯 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China

出　　处：《Optoelectronics Letters》2013年第1期25-29,共5页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Nos.60736005 and 60425101-1);the Foundation for Innovation Groups of NSFC (No.61021061);the Fundamental Research Funds for the Central Universities (No.ZYGX2010Z004);the SRF for ROCS, SEM (No.GGRYJJ08-05);the Doctoral Fund of Ministry of China (No.20090185110020)

摘　　要：High-performance phosphorescent white organic light-emitting devices (PhWOLEDs) with color stability and low efficiency decay are demonstrated by inserting wide band-gap materials between emitting layers. The two devices with N,N'- dicarbazolyl-3,5-benzene (mCP) and p-bis(triphenylsilyl)benzene (UGH2) as the interlayer exhibit both slight Commission Internationale del'Eclairage (CIE) coordinates variations of (±0.010, ±0.005) and (±0.013, ±0.006) in a wide voltage range, and low decay in current efficiency which shifts from the peak value 35.4 cd·A-1 and 27.4 cd·A-1 to 28.8 cd·A-1 and 23.5 cd·A-1 at 40000 cd·m-2 , respectively. The improvements are attributed to the charge carriers balance and the elimination of energy transfer loss by confining the carrier accumulation at the exciton formation interface through the interlayer.High-performance phosphorescent white organic light-emitting devices （PhWOLEDs） with color stability and low efficiency decay are demonstrated by inserting wide band-gap materials between emitting layers. The two devices with N,N＇- dicarbazolyl-3,5-benzene （mCP） and p-bis（triphenylsilyl）benzene （UGH2） as the interlayer exhibit both slight Commission Intemationale del＇ Eclairage （CIE） coordinates variations of （± 0.010, ±0.005） and （±0.013, ± 0.006） in a wide voltage range, and low decay in curreixt efficiency which shifts from the peak value 35.4 cd · A-1 and 27.4 cd· A-1 to 28.8 cd· A-1 and 23.5 cd · A-1 at 40000 cd· m-2, respectively. The improvements are attributed to the charge can：iers balance and the elimination of energy transfer loss by confining the carrier accumulation at the exciton formation interface through the interlayer.

关 键 词：颜色稳定性 低衰减 宽带隙 发光装置 磷光 低效率 发光性 层间 

分 类 号：TN383[电子电信—物理电子学]