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机构地区:[1]泉州师范学院物理与信息工程学院,泉州362000
出 处:《物理学报》2012年第24期482-489,共8页Acta Physica Sinica
基 金:福建省自然科学基金(批准号:2010J01305,E0510027);泉州市科技项目计划(批准号:2009G8);福建省高校服务海西建设重点项目(批准号:A100)资助的课题~~
摘 要:采用射频共溅射方法制备了FexZn1-xO(x=0.80,0.86,0.93)非晶薄膜,该薄膜具有较强的室温铁磁性,制备态的Fe0.93Zn0.07O的饱和磁化强度Ms可达333.29emu/cm3,磁性能是各向同性的.与多晶的FexZn1-xO(x20%)不同的是样品出现了明显的异常霍尔效应(AHE),样品均为n型半导体,载流子浓度约为1019—1020cm3.退火后的样品在低温222K下存在着电阻极小值现象.薄膜的低温电阻导电机理属于自旋依赖的电子变程跃迁机理,上述实验结果表明高Fe含量的非晶FeZnO体系有作为新型自旋电子学器件材料的可能.The FezZn1-xO (x = 0.80, 0.86, 0.93)amorphous films were fabricated by RF sputtering method. The films each have a strong ferromagnetism at room temperature. The saturation magnetization Ms can reacl 333.29 emu/cma in the as-sputtered Fe0.93Zn0.07O. Magnetism is isotropic. The sample obviously exhibits an anomalous Hall effect, which is different from the poly- crystalline FezZn1-xO (x ≤ 20%). The samples are of n-type semiconductor, with a carrier concentration of about 10^19--10^20 cm-3. After being annealed, the samples each present a resistance minimum phenomenon at a low temperature (222 K). The conductive mechanism is of the spin dependent variable range hopping resistance in the low-temperature. The experimental results show that amorphous FeZnO system of high Fe composition is a potential candidate of the new spintronic device materials.
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