不同基底上银薄膜的光电学性质研究  

Study of optical and electrical properties of Ag films deposited on different substrates

作　　者：林建平[1] 兰慧琴[2] 吴杨微[2] 关贵清[1] 赖发春[2] 

机构地区：[1]宁德师范学院物理与电气工程系,福建宁德352100 [2]福建师范大学物理与能源学院,福建福州350108

出　　处：《光电子．激光》2013年第1期87-92,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(11074041);福建省自然科学基金(2012J01256);宁德师范学院"服务海西建设"(2010H301;2011H208)资助项目

摘　　要：用热蒸发的方法,分别在孔径约为200nm的多孔阳极氧化铝(AAO)模板和空白石英基片上室温沉积厚为25～200nm的Ag薄膜样品,研究膜厚对两种样品的微观结构和光电学性质的影响。微观结构利用X射线衍射仪(XRD)和扫描电镜(SEM)观测,光电学性质应用分光光度计及Van derPauw方法检测。结果表明,石英基片上Ag(QuartzAg)薄膜的结晶性能比AAO模板上Ag(AAO-Ag)薄膜的结晶性能好,当厚为200nm时,AAOAg薄膜形成纳米颗粒的叠层结构;AAOAg薄膜的全反射率和QuartzAg薄膜的反射率均遵循随膜厚增加而增加的规律。在同一厚度和同一波长条件下,AAOAg薄膜的光学反射率比QuartzAg薄膜小很多,当厚为109nm时,在可见光和红外光区域,QuartzAg薄膜的反射率超过95%,而AAOAg薄膜的全反射率为40%;QuartzAg薄膜在厚度为25nm时已导电,而AAOAg薄膜的厚度为37nm时才开始导电。对于同一厚度,AAOAg薄膜的方块电阻比QuartzAg薄膜的大,随着膜厚的增加,它们的差值从厚为37nm时的4.90Ω/口逐渐减小到厚为200nm时的0.37Ω/口。Ag films with the normal thickness （d） ranging from 25 nm to 200 nm were ,deposited on anodic aluminum oxide （AAO） templates （200 nm pore diameter） and quartz substrates by thermal evaporation technique. The effects of thickness on the structure, optical and electrical properties are investigated. The microstructure is studied by X-ray diffraction （XRD） and scanning electron microscopy （SEM）. Optical and electrical properties are measured by spectrophotometer and Van der Pauw method,respectively. The results show that the crystalline performance of the Ag films on quartz substra.tes （QuartzAg） is better than that of the Ag films on AAO templates （AAOAg）. When d=200 nm,the nanopartieles in AAOAg film pile up. Total reflectance （R） of both AAOAg and QuartzAg films increases with the increase of d. But R of AAOAg film is much lower than that of QuartzAg film. As d is 109 nm,R of QuartzAg film is higher than 95% in the visible and near infrared optical regions, while R of AAOAg film is only 40%. The QuartzAg film with 25 nm thickness is conductive,but d of the conductive AAOAg film must be larger than 37 nm. At the same d,the sheet resistance of AAOAg film is higher than that of QuartzAg film. The difference of sheet resistance between AAOAg and QuartzAg films decreases from 4. 90 Ω/□ to 0. 37 Ω/□ as d increases from 37 nm to 200 nm.

关 键 词：AAO模板 石英基片 Ag薄膜 热蒸发 光电学性质 

分 类 号：O484.4[理学—固体物理]