具有双周期势的石墨烯超晶格电子带隙和传输特性的研究  

Electronic band gap and transport properties in graphene superlattice with period-doubling potentials

作　　者：张玉萍[1] 尹贻恒[1] 刘蒙[1] 吴志心[1] 申端龙[1] 王翠玲[1] 张会云[1] 

机构地区：[1]山东科技大学理学院山东省青岛市太赫兹技术重点实验室,山东青岛266590

出　　处：《光电子．激光》2013年第1期190-196,共7页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61001018;60637010);山东省自然科学基金(ZR2011FM009;ZR2012FM011);山东科技大学杰出青年科学基金(2010KYJQ103);山东省高等学校科技计划(J11LG20);青岛市科技计划项目(11-2-4-4-(8)-jch;10-3-4-2-1-jch);山东科技大学春蕾计划(2010AZZ083)资助项目

摘　　要：运用传输矩阵理论,研究了双周期势石墨烯超晶格(GSL)的电子带隙和传输特性。结果表明,这种准周期结构存在一个新的狄拉克点,并且它的位置恰好位于零平均波数带隙处;与传统的布拉格带隙相比,这种带隙的位置对晶格常数和入射角度的变化不敏感。讨论了入射角度对电子在双周期势中传输特性的影响,预言了双周期势中可控的电子传输过程,定量分析了允带宽度与周期总数目的幂指数关系。To explore the practicability of electronics based on graphene superlattice （GSL）, using the transfer matrix method, the properties of electronic band gap and transport in period-doubling quasi-periodic graphene superlattice have been investigated. It is found that such a structure cn posses a zerc-k^- gap which exists in high period-doubling sequences. Different from Bragg gap,the position of the zero-k^- gap associated with Dirac point is less sensitive to the incidence angle and lattice constants. Furthermore, we investigate the incident angle on the electronic transport and the distribution of the allowed bandwidths for high generations, which gives a good insight about their power laws. The characteristics of electron transport over period-doubling graphene superlattice may facilitate the development of many graphenebased electronics devices.

关 键 词：石墨烯超晶格(GSL) 双周期势 晶格常数 能隙 

分 类 号：TQ165[化学工程—高温制品工业]