Electron flux distributions in photodetachment of HF^- near an interface: Theoretical imaging method study  

作　　者：Maryam Nawaz Awan A. Afaq 

机构地区：[1]Centre of Excellence in Solid State Physics, University of the Punjab Lahore-54590, Pakistan

出　　处：《Chinese Physics B》2013年第1期187-190,共4页中国物理B（英文版）

摘　　要：The electron flux distributions in the photodetachment of HF- near an interface are studied using a two-center model and the theoretical imaging method. An analytical expression for electron flux distributions is derived, which displays oscillations on an observation plane similar to the recent results published by Wang but in the presence of a static electric field. We also discuss the expressions for soft and hard wall cases in detail. A comparison is made with the previous work. The expression is a more general result, and we can deduce from it the electron flux distributions for the photodetachment of H2 near an interface. Finally, we show that the expression reveals similar results as those in [Chin. Phys. B 19 020306 （2010）] when the wall effect is neglected.The electron flux distributions in the photodetachment of HF- near an interface are studied using a two-center model and the theoretical imaging method. An analytical expression for electron flux distributions is derived, which displays oscillations on an observation plane similar to the recent results published by Wang but in the presence of a static electric field. We also discuss the expressions for soft and hard wall cases in detail. A comparison is made with the previous work. The expression is a more general result, and we can deduce from it the electron flux distributions for the photodetachment of H2 near an interface. Finally, we show that the expression reveals similar results as those in [Chin. Phys. B 19 020306 （2010）] when the wall effect is neglected.

关 键 词：negative ions two-center model electron flux quantum interference 

分 类 号：O431.2[机械工程—光学工程]