Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers  被引量:2

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

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作  者:史国柱 关宝路 李硕 王强 沈光地 

机构地区:[1]Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology

出  处:《Chinese Physics B》2013年第1期257-262,共6页中国物理B(英文版)

基  金:Project supported by the National Natural Science Foundation of China (Grant Nos. 60908012 and 61076148);the Foundation of Beijing Municipal Education Commission, China (Grant No. KM201010005030)

摘  要:We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with a 16 -um oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5 ℃-80 ℃. Measurements combined with an empirical model are used to analyse the power dissipation in the device and the physical mechanism contributing to the thermal rollover phenomenon in VCSEL. It is found that the carrier leakage induced selfheating in the active region and the Joule heating caused by the series resistance are the main sources of power dissipation. In addition, carrier leakage induced self-heating increases as the injection current increases, resulting in a rapid decrease of the internal quantum efficiency, which is a dominant contribution to the thermal rollover of the VCSEL at a larger current. Our study provides useful guidelines to design a 980-nm oxide-confined VCSEL for thermal performance enhancement.We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with a 16 -um oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5 ℃-80 ℃. Measurements combined with an empirical model are used to analyse the power dissipation in the device and the physical mechanism contributing to the thermal rollover phenomenon in VCSEL. It is found that the carrier leakage induced selfheating in the active region and the Joule heating caused by the series resistance are the main sources of power dissipation. In addition, carrier leakage induced self-heating increases as the injection current increases, resulting in a rapid decrease of the internal quantum efficiency, which is a dominant contribution to the thermal rollover of the VCSEL at a larger current. Our study provides useful guidelines to design a 980-nm oxide-confined VCSEL for thermal performance enhancement.

关 键 词:vertical-cavity surface-emitting lasers power dissipation thermal rollover 

分 类 号:TN248[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]

 

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