Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge  

作　　者：胡波 黄仕华 吴锋民 

机构地区：[1]Physics Department, Zhejiang Normal University

出　　处：《Chinese Physics B》2013年第1期486-490,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 61076055);the Program for Innovative Research Team of Zhejiang Normal University of China (Grant No. 2007XCXTD-5);the Open Program of Surface Physics Laboratory of Fudan University, China (Grant No. FDSKL2011-04)

摘　　要：A model based on analysis of the self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor （MOS） structure. In this model, the influences of interface trap charge （ITC） at the Si-SiO2 interface and fixed oxide charge （FOC） in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than l012 cm 2, which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for the tunneling current in the inversion layer.A model based on analysis of the self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor （MOS） structure. In this model, the influences of interface trap charge （ITC） at the Si-SiO2 interface and fixed oxide charge （FOC） in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than l012 cm 2, which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for the tunneling current in the inversion layer.

关 键 词：tunneling current ultrathin oxide interface trap charge fixed oxide charge 

分 类 号：TN386.1[电子电信—物理电子学] TN72