Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study  

作　　者：周安 修向前 张荣 谢自力 华雪梅 刘斌 韩平 顾书林 施毅 郑有炓 

机构地区：[1]School of Physics, Nanjing University [2]Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University

出　　处：《Chinese Physics B》2013年第1期513-517,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2011CB301900);the National High Technology Research and DevelopmentProgram of China (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, and60936004);the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010, BK2010385, BK2009255, and BK2010178)

摘　　要：To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics （CFD） and molecular dynamics （MD） simulations. Both of the simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation.To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics （CFD） and molecular dynamics （MD） simulations. Both of the simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation.

关 键 词：GaN growth computational fluid dynamics molecular dynamics 

分 类 号：TN304.055[电子电信—物理电子学]