Mechanism of amorphous Ge_2Sb_2Te_5 removal during chemical mechanical planarization in acidic H_2O_2 slurry  

作　　者：何敖东 宋志棠 刘波 钟旻 王良咏 吕业刚 封松林 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences [2]University of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第1期547-551,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003,61006087, 61076121, 61176122, and 61106001);the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800);the Chinese Academy of Sciences (Grant No. 20110490761)

摘　　要：In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.

关 键 词：H2O2 chemical mechanical planarization Ge2Sb2Te5 

分 类 号：O611.3[理学—无机化学]