Performance improvement of CdS/Cu(In,Ga)Se_2 solar cells after rapid thermal annealing  

作　　者：陈东生 杨洁 徐飞 周平华 杜汇伟 石建伟 于征汕 张玉红 Brian Bartholomeusz 马忠权 

机构地区：[1]SHU-SolarE R & D Laboratory, Department of Physics, Shanghai University [2]College of Mathematics and Physics, Shanghai University of Electric Power [3]Shanghai Solar EnerTech Co. Ltd [4]Applied Quantum Technology Ltd. Co. USA

出　　处：《Chinese Physics B》2013年第1期564-568,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60876045);the Shanghai Leading Basic Research Project, China (Grant No. 09JC1405900);the Shanghai Leading Academic Discipline Project, China (Grant No. S30105);the R & D Foundation of SHU-SOENs PV Joint Laboratory, China (Grant No. SS-E0700601)

摘　　要：In this paper, we investigated the effect of rapid thermal annealing （RTA） on solar cell performance. An opto-electric conversion efficiency of 11.75% （Voc = 0.64 V, Jsc = 25.88 mA/cm2, FF=72.08%） was obtained under AM 1.5G when the cell was annealed at 300℃ for 30 s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction （XRD）, Raman spectra, front surface reflection （FSR）, internal quantum efficiency （IQE）, and X-ray photoelectron spectroscopy （XPS） were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu（In, Ga）Se2 （CIGS） layers. This leaded to the improved performance of CIGS solar cell.In this paper, we investigated the effect of rapid thermal annealing （RTA） on solar cell performance. An opto-electric conversion efficiency of 11.75% （Voc = 0.64 V, Jsc = 25.88 mA/cm2, FF=72.08%） was obtained under AM 1.5G when the cell was annealed at 300℃ for 30 s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction （XRD）, Raman spectra, front surface reflection （FSR）, internal quantum efficiency （IQE）, and X-ray photoelectron spectroscopy （XPS） were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu（In, Ga）Se2 （CIGS） layers. This leaded to the improved performance of CIGS solar cell.

关 键 词：CdS/Cu（In Ga）Se2 solar cell rapid thermal annealing performance improvement 

分 类 号：TM914.4[电气工程—电力电子与电力传动]