MgO(001) barrier based magnetic tunnel junctions and their device applications  

作　　者：HAN XiuFeng ALI Syed Shahbaz LIANG ShiHeng 

机构地区：[1]State Key Laboratory of Magnetism,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Science China(Physics,Mechanics & Astronomy)》2013年第1期29-60,共32页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the State Key Project of Fundamental Research of the Ministry of Science and Technology(Grant No. 2010CB934400);the National Natural Science Foundation of China (Grant Nos.10934099,51021061,and 11104338);the National Science Fund for Distinguished Young Scholars(Grant No.50325104);the International Collaborative Research Programs between NSFC and EPSRC of the United Kingdom(Grant No.10911130234);between NSFC and ANR of France(Grant No.F040803)

摘　　要：Spintronics has received a great attention and significant interest within the past decades,and provided considerable and remarked applications in industry and electronic information etc.In spintronics,the MgO based magnetic tunnel junction(MTJ) is an important research advancement because of its physical properties and excellent performance,such as the high TMR ratio in MgO based MTJs.We present an overview of more than a decade development in MgO based MTJs.The review contains three main sections.(1) Research of several types of MgO based MTJs,including single-crystal MgO barrier based-MTJs,double barrier MTJs,MgO based MTJs with interlayer,novel electrode material MTJs based on MgO,novel barrier based MTJs,novel barrier MTJs based on MgO,and perpendicular MTJs.(2) Some typical physical effects in MgO based MTJs,which include six observed physical effects in MgO based MTJs,namely spin transfer torque(STT) effect,Coulomb blockade magnetoresistance(CBMR) effect,oscillatory magnetoresistance,quantum-well resonance tunneling effect,electric field assisted magnetization switching effect,and spincaloric effect.(3) In the last section,a brief introduction of some important device applications of MgO based MTJs,such as GMR & TMR read heads and magneto-sensitive sensors,both field and current switching MRAM,spin nano oscillators,and spin logic devices,have been provided.Spintronics has received a great attention and significant interest within the past decades, and provided considerable and re- marked applications in industry and electronic information etc. In spintronics, the MgO based magnetic tunnel junction （MTJ） is an important research advancement because of its physical properties and excellent performance, such as the high TMR ratio in MgO based MTJs. We present an overview of more than a decade development in MgO based MTJs. The review contains three main sections. （1） Research of several types of MgO based MTJs, including single-crystal MgO barrier based-MTJs, double barrier MTJs, MgO based MTJs with interlayer, novel electrode material MTJs based on MgO, novel barrier based MTJs, novel barrier MTJs based on MgO, and perpendicular MTJs. （2） Some typical physical effects in MgO based MTJs, which include six observed physical effects in MgO based MTJs, namely spin transfer torque （STT） effect, Coulomb blockade magnetoresistance （CBMR） effect, oscillatory magnetoresistance, quantum-well resonance tunneling effect, electric field as- sisted magnetization switching effect, and spincaloric effect. （3） In the last section, a brief introduction of some important de- vice applications of MgO based MTJs, such as GMR ＆ TMR read heads and magneto-sensitive sensors, both field and current switching MRAM, spin nano oscillators, and spin logic devices, have been provided.

关 键 词：magnetic tunnel junction （MTJ） tunneling magnetoresistance （TMR） MGO spin transfer torque （STT） Coulombblockade magnetoresistance （CBMR） 

分 类 号：O469[理学—凝聚态物理]