大功率窄脉冲半导体激光光源等效电路参数研究  

Research on the Key Technology of the Semiconductor Laser Light Source with High-power and Narrow-pulse

作　　者：辛德胜[1] 张剑家[1] 程勇杰[1] 

机构地区：[1]长春理工大学高功率半导体激光器国家重点实验室,吉林长春130022

出　　处：《兵工学报》2012年第12期1485-1492,共8页Acta Armamentarii

摘　　要：针对大功率窄脉冲激光光源的激光器多管芯组合结构等效电路的参数提取困难的问题,提出了基于外特性测量法来提取激光器多管芯组合结构等效电路参数的简捷方法。其特点是:在不知道半导体激光器的材料及内部结构的情况下,通过对实物电路系统电参数的测量并利用Pspice仿真软件经多次参数拟合来获得半导体激光器等效电路参数。实验结果表明,利用该方法提取的半导体激光器等效电路参数与国外产品给出的等效电路参数相吻合。它为大功率窄脉冲半导体激光器驱动源的设计提供了依据,对多个管芯的组合方式、组合结构设计及装配工艺具有指导意义。在此基础上,设计并制作了半导体激光器板载结构的驱动源电路实验系统,其输出功率为180 W,光脉冲的上升时间为3.2 ns,脉冲的宽度为8.3 ns.For the laser light source with the high-power and narrow-pulse,the simple method of the extract parameters of equivalent circuit model was proposed,base on measuring external characteristic,which to solve the problem of the extraction for the equivalent circuit of the laser multi-chip array structure.The basic features are as follows： without the data of the internal structure and the materials of the semiconductor,measuring the electrical parameters of the real circuit system and using Pspice simulation software to gain multiple sets of data for fitting equivalent circuit parameters of the semiconductor laser.The results are consistent with that given by the foreign products.It provides a foundation for the driver source design of the laser diode with high-power and narrow-pulse,and has the guiding significance for the combination,the array structure planing and assembly process of the multi-chip.On this basis,the driver source circuit experiment system of the semiconductor lasers on-board structure was designed and manufactured,the output power of 180 W,the rise time of the light pulse of 3.2 ns was obtained and the corresponding pulse width was 8.3 ns.

关 键 词：光电子学与激光技术 窄脉冲激光光源 等效电路 参数提取 多个管芯组合 

分 类 号：TN249[电子电信—物理电子学]