Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure  

作　　者：庄娟 孙继忠 桑超峰 王德真 

机构地区：[1]School of Physics and Optoelectronic Technology,Dalian University of Technology

出　　处：《Plasma Science and Technology》2012年第12期1106-1109,共4页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China(Nos.10775026,50537020,and50528707)

摘　　要：The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes-excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges-and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency （VHF） on the densities of species （e, H, SiH3, SiH＋ and SiH2） in such discharges using the model. The simulation results show that the densities of SiH3, SiH＋, H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of uc-Si：H film depends on the concentration of SiH3, SiH＋, SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for uc-Si：H film growth is also discussed in this paper.The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes-excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges-and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency （VHF） on the densities of species （e, H, SiH3, SiH＋ and SiH2） in such discharges using the model. The simulation results show that the densities of SiH3, SiH＋, H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of uc-Si：H film depends on the concentration of SiH3, SiH＋, SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for uc-Si：H film growth is also discussed in this paper.

关 键 词：plasma numerical simulation hydrogen dilution 

分 类 号：TN304.12[电子电信—物理电子学]