Analysis of the subthreshold characteristics of vertical tunneling field effect transistors  

作　　者：韩忠方 茹国平 阮刚 

机构地区：[1]State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University

出　　处：《Journal of Semiconductors》2013年第1期28-34,共7页半导体学报（英文版）

基　　金：Project supported by the International Research Training Group

摘　　要：Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device simulator.Three types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations.Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET.This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two components.To our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid.Our results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device simulator.Three types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping concentrations.Band diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor FET.This VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two components.To our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and valid.Our results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.

关 键 词：tunneling field effect transistor metal-oxide-semiconductor field effect transistor subthreshold swing 

分 类 号：TN386[电子电信—物理电子学] TN312.2