Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device  

作　　者：Aritra Acharyya Suranjana Banerjee J.P.Banerjee 

机构地区：[1]Institute of Radio Physics and Electronics,University of Calcutta,92,APC Road,Kolkata-700009,India [2]Academy of Technology,West Bengal University of Technology,Adisaptagram,Hooghly-712121,West Bengal,India

出　　处：《Journal of Semiconductors》2013年第2期19-30,共12页半导体学报（英文版）

摘　　要：The authors have developed a large-signal simulation technique extending an in-house small-signal simulation code for analyzing a 94 GHz double-drift region impact avalanche transit time device based on silicon with a non-sinusoidal voltage excitation and studied the effect of junction temperature between 300 and 550 K on the large-signal characteristics of the device for both continuous wave （CW） and pulsed modes of operation. Results show that the large-signal RF power output of the device in both CW and pulsed modes increases with the increase of voltage modulation factor up to 60%, but decreases sharply with further increase of voltage modulation factor for a particular junction temperature; while the same parameter increases with the increase of junction temperature for a particular voltage modulation factor. Heat sinks made of copper and type-IIA diamond are designed to carry out the steady-state and transient thermal analysis of the device operating in CW and pulsed modes respectively. Authors have adopted Olson＇s method to carry out the transient analysis of the device, which clearly establishes the superiority of type-IIA diamond over copper as the heat sink material of the device from the standpoint of the undesirable effect of frequency chirping due to thermal transients in the pulsed mode.The authors have developed a large-signal simulation technique extending an in-house small-signal simulation code for analyzing a 94 GHz double-drift region impact avalanche transit time device based on silicon with a non-sinusoidal voltage excitation and studied the effect of junction temperature between 300 and 550 K on the large-signal characteristics of the device for both continuous wave （CW） and pulsed modes of operation. Results show that the large-signal RF power output of the device in both CW and pulsed modes increases with the increase of voltage modulation factor up to 60%, but decreases sharply with further increase of voltage modulation factor for a particular junction temperature; while the same parameter increases with the increase of junction temperature for a particular voltage modulation factor. Heat sinks made of copper and type-IIA diamond are designed to carry out the steady-state and transient thermal analysis of the device operating in CW and pulsed modes respectively. Authors have adopted Olson＇s method to carry out the transient analysis of the device, which clearly establishes the superiority of type-IIA diamond over copper as the heat sink material of the device from the standpoint of the undesirable effect of frequency chirping due to thermal transients in the pulsed mode.

关 键 词：admittance characteristics chirp bandwidth frequency chirping junction temperature large-signal analysis transient thermal analysis 

分 类 号：TN304.12[电子电信—物理电子学]