Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs  

作　　者：陈万军 张竞 张波 陈敬 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Science and Technology of China [2]Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology

出　　处：《Journal of Semiconductors》2013年第2期37-40,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60906037);the Research Fund for the Doctoral Program of Higher Education of China(No.20090185120021)

摘　　要：The gate forward leakage current in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leak- age current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.The gate forward leakage current in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leak- age current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.

关 键 词：fluorine-plasma surface treatment AlGaN/GaN HEMTs leakage current 

分 类 号：TN322[电子电信—物理电子学]