^4He离子卢瑟福背散射的Geant4模拟  

Geant4 -based Simulation of ^4He ions Rutherford Backscattering on Thin Films

作　　者：张慧[1] 梅雪松[1] 关世荣[1] 庞杨[1] 周巍[1] 鲁彤[1] 

机构地区：[1]黑龙江省科学院技术物理研究所,哈尔滨150086

出　　处：《黑龙江科学》2013年第1期22-24,共3页Heilongjiang Science

摘　　要：利用Geant4程序模拟了270keV、500keV4He离子垂直入射到Au、Ag、Cu薄膜的卢瑟福背散射谱(RBS),讨论了材料、厚度和入射离子能量对背散射谱的影响。对比不同能量4He离子的背散射谱,能量较大的4He离子进行薄膜背散射元素分析具有较好的质量分辨率。The Rutherford Backseattering spectra （RBS） for 270keV ,500keV^4 He normally incident on Au, Ag,Cu thin films are simulated nsing Geant4 Effects on RBS with different materials,thickness and energy, have been discussed. The characters of ^4He RBS are analyzed,and it is found that mass resolution is much better for 500keV ^4He RBS.

关 键 词：GEANT4 重离子 RBS分析 薄膜 

分 类 号：O484.5[理学—固体物理]