高性能可配置带隙基准源的设计  

Design of a high performance and configurable bandgap reference source

作　　者：尹勇生[1] 权磊[1] 邓红辉[1] 

机构地区：[1]合肥工业大学微电子设计研究所,合肥230009

出　　处：《电子测量与仪器学报》2012年第12期1056-1061,共6页Journal of Electronic Measurement and Instrumentation

基　　金：国家自然科学基金(61076026)资助项目

摘　　要：为满足高性能模拟及数模混合集成电路中多种基准电压的需求,设计了可配置,低温度系数和高电源抑制比的带隙基准电压源。通过逻辑电路控制,可配置电路使带隙基准源输出4种不同的参考电压;带隙基准源核心电路采用改进的Brokaw结构,输出电压为0.5 V。基于Chartered 0.18μm Mixed Signal 1P5M工艺模型,在电源电压1.8 V下,对设计的电路进行了仿真验证。仿真结果显示,可配置基准电压源可以实现4种不同的参考电压;在TT工艺角下,-40～125℃的温度范围内,基准源核心输出电压的温度系数达到9.2×10-6/℃;低频时,电源抑制比为107.2 dB,满足了设计指标要求。A configurable,low temperature coefficient and high power supply rejection ratio bandgap voltage refer-ence is designed for different reference voltages in high performance analog and mixed integrated circuits.Four different reference voltages are generated which are controlled by the digital logic circuit.A Brokaw bandgap reference is employed,and the output voltage is 0.5 V.The whole circuits are simulated by Spectre based on chartered 0.18μm 1P5M 1.8V CMOS technology.It＇s clear from the simulation result that four different reference voltages are obtained,the temperature coefficient of the bandgap reference core can be reach 9.2×10-6/℃ over the military temperature range and the power supply rejection ratio（PSRR） approaches 107.2 dB at low frequency in TT corner,and the proposed circuits meet the de-sign requirements.

关 键 词：带隙基准源 可配置 温度系数 电源抑制比 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN431.1